Artificial Neural Network-Based Modeling for Estimating the Effects of Various Random Fluctuations on DC/Analog/RF Characteristics of GAA Si Nanosheet FETs-Reference-Cited by-同舟云学术

Artificial Neural Network-Based Modeling for Estimating the Effects of Various Random Fluctuations on DC/Analog/RF Characteristics of GAA Si Nanosheet FETs

Published:2022-11 Issue:11 Volume:70 Page:4835-4848
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Butola Rajat¹^ORCID,Li Yiming¹^ORCID,Kola Sekhar Reddy¹^ORCID,Chen Chieh-Yang²,Chuang Min-Hui²

Affiliation:

1. Parallel and Scientific Computing Laboratory, Electrical Engineering and Computer Science International Graduate Program (EECS IGP), National Yang Ming Chiao Tung University, Hsinchu, Taiwan

2. Parallel and Scientific Computing Laboratory and the Institute of Communications Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx7/22/9939118/09868246.pdf?arnumber=9868246

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