28nm Data Memory with Embedded RRAM Technology in Automotive Microcontrollers
Author:
Affiliation:
1. Infineon Technologies Italia S.r.l., Via Tommaseo 65b,Padova,Italy,35131
2. Infineon Technologies AG, Am Campeon 1-15,Neubiberg,Germany,85579
3. Infineon Technologies Dresden GmbH & Co. KG,Dresden,Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10145914/10145815/10145951.pdf?arnumber=10145951
Reference10 articles.
1. Industrially Applicable Read Disturb Model and Performance on MegaBit 28nm Embedded RRAM;yang;VLSI,2020
2. Resistive RAM Endurance: Array-Level Characterization and Correction Techniques Targeting Deep Learning Applications
3. Investigation of radiation hardness of HfO2 resistive random access memory;tsui;2014 International Symposium on VLSI Technology Systems and Applications (VLSI-TSA),2014
4. Design Challenges and Solutions of Emerging Nonvolatile Memory for Embedded Applications
5. Fundamental variability limits of filament-based RRAM
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