An 18nm ePCM with BJT selector NVM design for advanced microcontroller applications-Reference-Cited by-同舟云学术

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An 18nm ePCM with BJT selector NVM design for advanced microcontroller applications

Published:2023-05 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Memory Workshop (IMW)
language:
Short-container-title:

Author:

Conte Antonino¹,Tomaiuolo Francesco¹,Ruta Marco¹,Redaelli Andrea²,Arnaud Franck³,Jouanneau Thomas⁴,Boccaccio Christian³,Weber Olivier³

Affiliation:

1. STMicroelectronics Microcontroller and Digital IC Group,Catania,Italy

2. STMicroelectronics Smartpower Technology R&D,Agrate Brianza,Italy

3. STMicroelectronics Manufacturing Technology R&D,Crolles,France

4. STMicroelectronics Microcontroller and Digital IC Group,Grenoble,France

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10145914/10145815/10145983.pdf?arnumber=10145983

Reference6 articles.

1. Reset Instability in Pulsed-Operated Unipolar Resistive-Switching Random Access Memory Devices

2. STT-MRAM - Status and Outlook

3. The PCM way for embedded non volatile memory appllications;zuliani;2019 IEEE Symposium on VLSI Technology,0

4. Bipolar Resistive RAM Based on ${\rm HfO}_{2}$ : Physics, Compact Modeling, and Variability Control

5. Reliability of 28nm embedded RRAM for consumer and industrial products

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Memristive tonotopic mapping with volatile resistive switching memory devices;Nature Communications;2024-04-01

2. Application Validation of High-Performance Microcontroller;2023 Cross Strait Radio Science and Wireless Technology Conference (CSRSWTC);2023-11-10

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