STT-MRAM - Status and Outlook

Author:

Worledge D. C.1,Safranski C.1,Hu G.1,Sun J. Z.1,Hashemi P.1,Brown S. L.1,Buzi L.1,D'Emic C. P.1,Gottwald M. G.1,Gunawan O.1,Jung H.1,Karimeddiny S.1,Kim J.1,Trouilloud P. L.1

Affiliation:

1. IBM-Samsung MRAM Alliance, IBM TJ Watson Research Center,Yorktown Heights,New York

Publisher

IEEE

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. An In-Memory Power Efficient Computing Architecture with Emerging VGSOT MRAM Device;2024 IEEE International Symposium on Circuits and Systems (ISCAS);2024-05-19

2. Ultrafast Inertia-Free Switching of Double Magnetic Tunnel Junctions;IEEE Transactions on Magnetics;2024-05

3. The fabrication of spin transfer torque-based magnetoresistive random access memory cell with ultra-low switching power;Japanese Journal of Applied Physics;2024-05-01

4. An 18nm ePCM with BJT selector NVM design for advanced microcontroller applications;2023 IEEE International Memory Workshop (IMW);2023-05

5. Full reliability characterization of three-terminal SOT-MTJ devices and corresponding arrays;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

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