Performance and robustness of first generation 600-V GaN-on-Si power transistors-Reference-Cited by-同舟云学术

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Performance and robustness of first generation 600-V GaN-on-Si power transistors

Published:2013-10 Issue: Volume: Page:
ISSN:
Container-title:The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications
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Author:

Wu Y.-F.,Gritters J.,Shen L.,Smith R.P.,McKay J.,Barr R.,Birkhahn R.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6683942/6695542/06695551.pdf?arnumber=6695551

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Innovations in GaN Four Quadrant Switch technology;2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2023-12-04

2. The Modeling of GaN-FET Power Devices in SPICE;Energies;2023-11-18

3. A Review of Circuit Models for GaN Power Devices;2023 IEEE 6th International Electrical and Energy Conference (CIEEC);2023-05-12

4. 1200V GaN Switches on Sapphire: A low-cost, high-performance platform for EV and industrial applications;2022 International Electron Devices Meeting (IEDM);2022-12-03

5. High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate;IEEE Transactions on Electron Devices;2022-09

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