1200V GaN Switches on Sapphire: A low-cost, high-performance platform for EV and industrial applications
Author:
Affiliation:
1. Transphorm, Inc,Goleta,CA,USA
2. Transphorm Japan,Shin-Yokohama,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019381.pdf?arnumber=10019381
Reference15 articles.
1. 1.5-kV and 2.2-m \(\Omega \) -cm \(^{2}\) Vertical GaN Transistors on Bulk-GaN Substrates
2. Demonstrating >1.4 kV OG-FET performance with a novel double field-plated geometry and the successful scaling of large-area devices
3. 1200V GaN Switches on Sapphrie Substrate;gupta;34th ISPSD,2022
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1. A CMOS-Compatible Process for ≥3 kV GaN Power HEMTs on 6-inch Sapphire Using In Situ SiN as the Gate Dielectric;Micromachines;2024-08-02
2. Report of GaN HEMTs on 8-in Sapphire;IEEE Transactions on Electron Devices;2024-07
3. p-GaN Gate HEMTs on 6-Inch Sapphire by CMOS-Compatible Process: A Promising Game Changer for Power Electronics;IEEE Electron Device Letters;2024-07
4. Insulated p-GaN Gate Active-Passivation HEMT Maintaining Effective Hole Injection for Low Dynamic ON-Resistance;IEEE Electron Device Letters;2024-06
5. 1.2 kV Enhancement-Mode p-GaN Gate HEMTs on 200 mm Engineered Substrates;IEEE Electron Device Letters;2024-04
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