Comparative study of temperature sensitive electrical parameters (TSEP) of Si, SiC and GaN power devices-Reference-Cited by-同舟云学术

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Comparative study of temperature sensitive electrical parameters (TSEP) of Si, SiC and GaN power devices

Published:2016-11 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
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Author:

Zhang Liqi,Liu Pengkun,Guo Suxuan,Huang Alex Q.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7784520/7799893/07799957.pdf?arnumber=7799957

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modelling and Evalaution of the Bidirectional Surge Current Robustness of Si(-IGBT and -Diode), SiC(-MOSFETs and -JFET) and GaN(-HEMTs) Devices;Energies;2024-08-31

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3. Online Junction Temperature Extraction for Cascode GaN Devices Based on Turn-On Delay;IEEE Transactions on Power Electronics;2024-08

4. Evaluation of high-temperature long-term reliability of transient liquid phase bonded joints using etched Cu foam/Sn–3.0Ag–0.5Cu composite solder preform;Journal of Materials Science: Materials in Electronics;2024-07

5. Online Condition Monitoring Methodology for Power Electronics Package Reliability Assessment;IEEE Transactions on Power Electronics;2024-04

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