DC Power-Optimized Ka-Band GaN-on-Si Low-Noise Amplifier With 1.5 dB Noise Figure

Author:

Pace L.1ORCID,Longhi P. E.1ORCID,Ciccognani W.1ORCID,Colangeli S.1ORCID,Vitulli F.2,Deborgies F.3,Limiti E.1ORCID

Affiliation:

1. Department of Electronic Engineering, Università di Roma Tor Vergata, Rome, Italy

2. Thales Alenia Space Italia, Rome, Italy

3. ESTEC, Noordwijk, AZ, The Netherlands

Funder

European Space Agency

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Reference24 articles.

1. Temperature effects on DC and small signal RF performance of AlGaAs/GaAs HEMTs

2. High linearity, robust, AlGaN-GaN HEMTs for LNA and receiver ICs

3. Analysis of the Survivability of GaN Low-Noise Amplifiers

4. Highly Rugged 30 GHz GaN Low-Noise Amplifiers

5. 6W Ka-band power amplifier and 1.2dB NF X-band amplifier using a 100nm GaN/Si process;leblanc;Proc IEEE Compound Semiconductor Integr Circuit Symp (CSICS),2016

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1. A Ka-Band Ultra-Low Power GaAs MMIC LNA;Lecture Notes in Electrical Engineering;2023-11-29

2. A 23 – 32 GHz LNA with Near 5 W Power Handling Capability Using 180 nm GaN HEMT Technology;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

3. On the Survivability of a 28 - 32 GHz GaN Low Noise Amplifier;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

4. An MMIC LNA for Millimeter-Wave Radar and 5G Applications with GaN-on-SiC Technology;Sensors;2023-07-22

5. Design and Simulation of Low Noise Amplifier for Sub-6GHz 5G Application;2023 International Conference on Smart Systems for applications in Electrical Sciences (ICSSES);2023-07-07

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