A 140–220-GHz Low-Noise Amplifier With 6-dB Minimum Noise Figure and 80-GHz Bandwidth in 130-nm SiGe BiCMOS
Author:
Affiliation:
1. Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA, USA
Funder
Texas Instruments-Semiconductor Research Corporation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/9944983/10042139/09905656.pdf?arnumber=9905656
Reference8 articles.
1. A 230-GHz SiGe Amplifier With 21.8-dB Gain and 3-dBm Output Power for Sub-THz Receivers
2. A 24.7 dB low noise amplifier with variable gain and tunable matching in 130 nm SiGe at 200 GHz
3. SiGe HBT technology with fT/fmax of 300 GHz/500 GHz and 2.0 ps CML gate delay;heinemann;IEDM Tech Dig,2010
4. An 88.5–110 GHz CMOS Low-Noise Amplifier for Millimeter-Wave Imaging Applications
5. 3.2-mW Ultra-Low-Power 173-207-GHz Amplifier With 130-nm SiGe HBTs Operating in Saturation
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