A 24.7 dB low noise amplifier with variable gain and tunable matching in 130 nm SiGe at 200 GHz

Author:

Starke Paul,Fritsche David,Carta Corrado,Ellinger Frank

Publisher

IEEE

Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A 148–170‐GHz 4‐bit variable gain amplifier with stagger‐tuning and multistage‐phase‐compensation techniques in 0.13‐μm SiGe;Microwave and Optical Technology Letters;2023-08

2. Circuit Synthesis of a 140–220 GHz Low-Noise Amplifier in 130 nm SiGe BiCMOS;2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD);2023-07-03

3. Area-Efficient and Wideband Input Stages for SiGe BiCMOS G-Band LNAs;2023 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME);2023-06-18

4. A G-Band SiGe BiCMOS LNA With an On-Chip and Compact Temperature Compensation Biasing Circuit;2023 IEEE/MTT-S International Microwave Symposium - IMS 2023;2023-06-11

5. A 140–220-GHz Low-Noise Amplifier With 6-dB Minimum Noise Figure and 80-GHz Bandwidth in 130-nm SiGe BiCMOS;IEEE Microwave and Wireless Technology Letters;2023-02

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