Circuit Synthesis of a 140–220 GHz Low-Noise Amplifier in 130 nm SiGe BiCMOS
Author:
Affiliation:
1. RWTH Aachen University,Chair of High Frequency Electronics,Aachen,Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10192100/10192102/10192183.pdf?arnumber=10192183
Reference8 articles.
1. A 24.7 dB low noise amplifier with variable gain and tunable matching in 130 nm SiGe at 200 GHz
2. 3.2-mW Ultra-Low-Power 173-207-GHz Amplifier With 130-nm SiGe HBTs Operating in Saturation
3. A 140–220-GHz Low-Noise Amplifier With 6-dB Minimum Noise Figure and 80-GHz Bandwidth in 130-nm SiGe BiCMOS
4. Synthesis of mm-Wave Wideband Receivers in 28-nm CMOS Technology for Automotive Radar Applications
5. Design and On-Wafer Characterization of $G$ -Band SiGe HBT Low-Noise Amplifiers
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1. RapidIP — Automated design of a 220–260 GHz power amplifier in a 130 nm BiCMOS technology;AEU - International Journal of Electronics and Communications;2024-04
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