A Ka-Band Transformer-Based Switchless Bidirectional PA-LNA in 90-nm CMOS Process
Author:
Funder
Taiwan Semiconductor Manufacturing Company (TSMC), Hsinchu, Taiwan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9574790/9574791/09574916.pdf?arnumber=9574916
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A Compact Ka-Band Bi-Directional PA-LNA with 17.4-dBm Psat Using Three-Stack Power Amplifier in 28-nm CMOS;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16
2. Design of a W-Band Transformer-Based Switchless Bidirectional PALNA in 65-nm CMOS Process;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16
3. A Band-Shifting Millimeter-Wave T/R Front-End Using Inductance-Mutation Transformer Technique for Multiband Phased-Array Transceivers;IEEE Journal of Solid-State Circuits;2024-05
4. A Wideband Bidirectional Amplifier Using Neutralized Technique for 5G Communication;2023 Asia-Pacific Microwave Conference (APMC);2023-12-05
5. Design of a 37-40GHz bidirectional amplifier for 5G FR2 radio beamforming systems in 22nm CMOS FD-SOI;2023 30th IEEE International Conference on Electronics, Circuits and Systems (ICECS);2023-12-04
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