A Band-Shifting Millimeter-Wave T/R Front-End Using Inductance-Mutation Transformer Technique for Multiband Phased-Array Transceivers-Reference-Cited by-同舟云学术

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A Band-Shifting Millimeter-Wave T/R Front-End Using Inductance-Mutation Transformer Technique for Multiband Phased-Array Transceivers

Published:2024-05 Issue:5 Volume:59 Page:1323-1336
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Zhao Fuyuan¹^ORCID,Deng Wei¹^ORCID,Jia Haikun¹^ORCID,Ye Wenjing¹,Wan Ruichen¹,Wang Zhihua¹^ORCID,Chi Baoyong¹^ORCID

Affiliation:

1. School of Integrated Circuits, Tsinghua University, Beijing, China

Funder

National Natural Science Foundation of China

Shenzhen Science and Technology Program

Tsinghua-Samsung Joint Research Project

Beijing Advanced Innovation Center for Integrated Circuits

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/4/10507893/10415461.pdf?arnumber=10415461

Reference47 articles.

1. Antenna Preprocessing and Element-Pattern Shaping for Multi-Band mmWave Arrays: Multi-Port Transmitters and Antennas

2. Deep Learning-Enabled Inverse Design of 30–94 GHz P_sat,3dB SiGe PA Supporting Concurrent Multiband Operation at Multi-Gb/s

3. A 24–47-GHz Resonant Multiband T/R Switch

4. A 21.7-to-41.7-GHz Injection-Locked LO Generation With a Narrowband Low-Frequency Input for Multiband 5G Communications

5. A 28-/60-GHz Band-Switchable Bidirectional Amplifier for Reconfigurable mm-Wave Transceivers

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