Design of a 37-40GHz bidirectional amplifier for 5G FR2 radio beamforming systems in 22nm CMOS FD-SOI
Author:
Affiliation:
1. Grenoble Alpes University,CEA, LETI, MINATEC Campus,Grenoble,France,38054
2. STMicroelectronics Crolles,Crolles,France,38921
3. Univ. Bordeaux, CNRS, Bordeaux INP, IMS, UMR 5218,Talence,France,F-33400
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10382705/10382711/10382936.pdf?arnumber=10382936
Reference6 articles.
1. A Bidirectional 56-72 GHz to 10.56 GHz Tranceiver Front-End with Integrated T/R Switches in 28-nm CMOS Technology
2. A Ka-Band Transformer-Based Switchless Bidirectional PA-LNA in 90-nm CMOS Process
3. A 28GHz Bulk-CMOS dual-polarization phased-array transceiver with 24 channels for 5G user and basestation equipment
4. A 28GHz CMOS Differential Bi-Directional Amplifier for 5G NR
5. A 26-to-39GHz Broadband Ultra-Compact High-Linearity Switchless Hybrid N/PMOS Bi-Directional PA/LNA Front-End for Multi-Band 5G Large-Scaled MIMO System
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