Trap-Mediated Avalanche in Large-Area 1.2 kV Vertical GaN p-n Diodes-Reference-Cited by-同舟云学术

Trap-Mediated Avalanche in Large-Area 1.2 kV Vertical GaN p-n Diodes

Published:2020-09 Issue:9 Volume:41 Page:1328-1331
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Liu Jingcun^ORCID,Xiao Ming^ORCID,Zhang Ruizhe^ORCID,Pidaparthi Subhash^ORCID,Drowley Cliff^ORCID,Baubutr Lek^ORCID,Edwards Andrew^ORCID,Cui Hao,Coles Charles,Zhang Yuhao^ORCID

Funder

Power Management Consortium at the Center for Power Electronics Systems (CPES), Virginia Polytechnic Institute and State University

China Scholarship Council

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9178388/09145602.pdf?arnumber=9145602

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