Improving a-InGaZnO TFTs Reliability by Optimizing Electrode Capping Structure Under Negative Bias Illumination Stress-Reference-Cited by-同舟云学术

Improving a-InGaZnO TFTs Reliability by Optimizing Electrode Capping Structure Under Negative Bias Illumination Stress

Published:2020-08 Issue:8 Volume:41 Page:1221-1224
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Tu Yu-Fa^ORCID,Lu I-Nien,Chen Hong-Chih^ORCID,Su Wan-Ching,Hung Yang-Hao,Zhou Kuan-Ju,Zheng Yu-Zhe,Sun Li-Chuan,Shih Yu-Shan,Chen Jian-Jie,Lien Chih-Ying,Huang Hui-Chun,Lien Chen-Hsin,Chang Ting-Chang^ORCID

Funder

Ministry of Science and Technology (MOST) Taiwan Core Facilities Laboratory for Nano-Science and Nano Technology in Kaohsiung-Pingtung Area

MOST Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9147077/09131836.pdf?arnumber=9131836

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Stably Saturated Output Current Characteristics and Hot-Carrier Reliability of a-InGaZnO Thin-Film Transistors With Source-Connected Field Plate;IEEE Transactions on Electron Devices;2023-09

2. Enhanced Stability Performance of Transparent Ozone ALD ZnO Thin-Film Transistors With SiAlO_X Dielectric;IEEE Transactions on Electron Devices;2023-02

3. Self-Compensation Effect of Photo-Bias Instabilities in a-InGaZnO Thin-Film Transistors Induced by Unique Ion Migration;IEEE Transactions on Electron Devices;2022-06

4. Improvement in Instability of Transparent ALD ZnO TFTs Under Negative Bias Illumination Stress With SiO/AlO Bilayer Dielectric;IEEE Journal of the Electron Devices Society;2022

5. Improvement on thermal stability for indium gallium zinc oxide by oxygen vacancy passivation with supercritical fluid cosolvent oxidation;Applied Physics Letters;2021-12-06