Investigation of the Impact of Externally Applied Out-of-Plane Stress on Ferroelectric FET

Author:

Liu YefanORCID,Clima SergiuORCID,Hiblot Gaspard,Matagne PhilippeORCID,Popovici Mihaela Loana,Kaczer BenORCID,Velenis Dimitrios,De Wolf IngridORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Ferroelectric Field Effect Transistors (FeFETs): Advancements, challenges and exciting prospects for next generation Non-Volatile Memory (NVM) applications;Materials Today Communications;2023-06

2. Transfer of Thin Silicon Films from SiO$${}_{\mathbf{2}}$$ and HfO$${}_{\mathbf{2}}$$ to C-Sapphire: Effect of Substrate Thickness on Ferroelectric Properties of Hafnium Dioxide;Optoelectronics, Instrumentation and Data Processing;2022-12

3. Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions;ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC);2022-09-19

4. Silicon and hafnia thin film transfer on c-plane sapphire: effect of substrate thickness on the ferroelectric hafnia properties;2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS);2021-09-01

5. Impact of mechanical strain on wakeup of HfO2 ferroelectric memory;2021 IEEE International Reliability Physics Symposium (IRPS);2021-03

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