Impact of mechanical strain on wakeup of HfO2 ferroelectric memory-Reference-Cited by-同舟云学术

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Impact of mechanical strain on wakeup of HfO2 ferroelectric memory

Published:2021-03 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Kruv A.,McMitchell S. R. C.,Clima S.,Okudur O. O.,Ronchi N.,Van den bosch G.,Gonzalez M.,De Wolf I.,Houdt J.Van

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9405068/9405088/09405159.pdf?arnumber=9405159

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural characteristics and polarization switching behaviors in HfO2-ZrO2 ferroelectric nanolaminates;Journal of Alloys and Compounds;2024-11

2. Applied in-plane strain effects on the polarization response of ferroelectric hafnium zirconium oxide thin films;Applied Physics Letters;2023-08-21

3. Metal–Ferroelectric–Semiconductor Tunnel Junction: Essential Physics and Design Explorations;IEEE Transactions on Electron Devices;2023-06

4. The Top Electrode Tensile Stress Effect on Ferroelectricity of Hf_0.5Zr_0.5O₂ Thin Films;2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2023-03-07

5. Transfer of Thin Silicon Films from SiO$${}_{\mathbf{2}}$$ and HfO$${}_{\mathbf{2}}$$ to C-Sapphire: Effect of Substrate Thickness on Ferroelectric Properties of Hafnium Dioxide;Optoelectronics, Instrumentation and Data Processing;2022-12

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