Resonant Gate Driver for High Speed GaN HMET with dV/dt Control-Reference-Cited by-同舟云学术

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Resonant Gate Driver for High Speed GaN HMET with dV/dt Control

Published:2021-11-24 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)
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Author:

Xiong Yuhao,Guo Zhuoqi,Xue Zhongming,Dong Li,Tang Bingjun,Xingzhi Liu,Ke Zheng,Geng Li

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9661584/9661598/09661857.pdf?arnumber=9661857

Reference4 articles.

1. New Resonant Gate Driver Circuit for High-Frequency Application of Silicon Carbide MOSFETs

2. A resonant power MOSFET/IGBT gate driver

3. A Comparison Review of the Resonant Gate Driver in the Silicon MOSFET and the GaN Transistor Application

4. Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative Study on Switching Oscillations of SiC MOSFETs Using Transfer Function and State-Space Model;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17

2. Passive clamping driver circuit for suppressing positive and negative gate crosstalk in GaN HEMTs;Journal of Power Electronics;2024-01-29

3. Resonant driving scheme for p-doped gallium nitride high electron mobility transistor to reduce driving power loss;Energy Reports;2023-10

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