Passive clamping driver circuit for suppressing positive and negative gate crosstalk in GaN HEMTs
Author:
Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s43236-023-00762-5.pdf
Reference17 articles.
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2. Hu, W.R., Luo, H.R., Yan, X., et al.: An accurate neural network-based consistent gate charge model for GaN HEMTs by refining intrinsic capacitances. IEEE Trans. Microw. Theory Tech.Microw. Theory Tech. 69(7), 3208–3218 (2021)
3. Huang, X., Li, Q., Liu, Z., et al.: Analytical loss model of high voltage GaN HEMT in cascode configuration. IEEE Trans. Power Electron. 29(5), 2208–2219 (2014)
4. Chen, J., Luo, Q.M., Huang, J., et al.: A complete switching analytical model of low-voltage eGaN HEMTs and its application in loss analysis. IEEE Trans. Ind. Electron. 67(2), 1615–1625 (2020)
5. Chen, J., Du, X., Luo, Q.M., et al.: A review of switching oscillations of wide bandgap semiconductor devices. IEEE Trans. Power Electron. 35(12), 13182–13199 (2020)
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