Comparative Study on Switching Oscillations of SiC MOSFETs Using Transfer Function and State-Space Model-Reference-Cited by-同舟云学术

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Comparative Study on Switching Oscillations of SiC MOSFETs Using Transfer Function and State-Space Model

Published:2024-05-17 Issue: Volume: Page:2665-2670
ISSN:
Container-title:2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)
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Author:

Yin Qianchen¹,Li Helong¹,Yang Zhiqing¹,Zhao Shuang¹,Ding Lijian¹

Affiliation:

1. Hefei University of Technology,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10567049/10567050/10568011.pdf?arnumber=10568011

Reference10 articles.

1. A Review of Switching Oscillations of Wide Bandgap Semiconductor Devices

2. Effectiveness Analysis of SiC MOSFET Switching Oscillation Damping

3. Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence

4. Resonant Gate Driver for High Speed GaN HMET with dV/dt Control

5. A novel gate assisted circuit to reduce switching loss and eliminate shoot-through in SiC half bridge configuration

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