A 200 - 325 GHz Gain-Boosted J-Band Low-Noise Amplifier in a 130 nm SiGe BiCMOS Technology-Reference-Cited by-同舟云学术

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A 200 - 325 GHz Gain-Boosted J-Band Low-Noise Amplifier in a 130 nm SiGe BiCMOS Technology

Published:2024-01-21 Issue: Volume: Page:67-70
ISSN:
Container-title:2024 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
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Author:

Koch Manuel¹,Breun Sascha¹,Weigel Robert¹

Affiliation:

1. Institute for Electronics Engineering,Friedrich-Alexander-Universität Erlangen-Nürnberg,Erlangen,Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10438445/10438446/10438562.pdf?arnumber=10438562

Reference9 articles.

1. A Review of Integrated Systems and Components for 6G Wireless Communication in the D-Band

2. A SiGe D-Band Low-Noise Amplifier Utilizing Gain-Boosting Technique

3. A Broadband 200 GHz Amplifier with 17 dB Gain and 18 mW DC-Power Consumption in 0.13 $\mu$m SiGe BiCMOS

4. A 200–325-GHz wideband, low-loss modified Marchand balun in SiGe BiCMOS technology

5. A 220–330 GHz Wideband, Low-Loss and Small Marchand Balun with Ground Shields in SiGe BiCMOS Technology

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