A Broadband 200 GHz Amplifier with 17 dB Gain and 18 mW DC-Power Consumption in 0.13 $\mu$m SiGe BiCMOS

Author:

Fritsche David,Carta Corrado,Ellinger Frank

Funder

German Research Foundation DFG within the frame of the Collaborative Research Center 912 Highly Adaptive Energy-Efficient Computing subproject A01

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 26 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A 200 - 325 GHz Gain-Boosted J-Band Low-Noise Amplifier in a 130 nm SiGe BiCMOS Technology;2024 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF);2024-01-21

2. Overall Transmission Rate of 41.6 Gbit/s-0.22 THz OFDM Upstream–Downstream Real-Time Transceivers Facing Over-500 m Communication;IEEE Transactions on Terahertz Science and Technology;2024-01

3. Comparative Performance of 100–200 GHz Wideband Transceivers: CMOS vs Compound Semiconductors;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

4. Area-Efficient and Wideband Input Stages for SiGe BiCMOS G-Band LNAs;2023 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME);2023-06-18

5. A G-Band SiGe BiCMOS LNA With an On-Chip and Compact Temperature Compensation Biasing Circuit;2023 IEEE/MTT-S International Microwave Symposium - IMS 2023;2023-06-11

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