A 200–325-GHz wideband, low-loss modified Marchand balun in SiGe BiCMOS technology
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/7331835/7345669/07345694.pdf?arnumber=7345694
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A W-Band Marchand Balun in 0.1 μm GaAs pHEMT Process;2023 IEEE USNC-URSI Radio Science Meeting (Joint with AP-S Symposium);2023-07-23
2. Active BALUN with 40 GHz bandwidth at 257 GHz in 130 nm SiGe:C;2022 IEEE 22nd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF);2022-01-16
3. A 220–330 GHz Wideband, Low-Loss and Small Marchand Balun with Ground Shields in SiGe BiCMOS Technology;2021 IEEE MTT-S International Microwave and RF Conference (IMARC);2021-12-17
4. A 300-GHz Transmitter Front End With −4.1-dBm Peak Output Power for Sub-THz Communication Using 130-nm SiGe BiCMOS Technology;IEEE Transactions on Microwave Theory and Techniques;2021-11
5. An Edge-Coupled Marchand Balun With Partial Ground for Excellent Balance in 0.13 μm SiGe Technology;IEEE Transactions on Circuits and Systems II: Express Briefs;2021-01
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