Author:
Ahmed Faisal,Furqan Muhammad,Stelzer Andreas
Cited by
11 articles.
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1. A 200 - 325 GHz Gain-Boosted J-Band Low-Noise Amplifier in a 130 nm SiGe BiCMOS Technology;2024 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF);2024-01-21
2. A W-Band Marchand Balun in 0.1 μm GaAs pHEMT Process;2023 IEEE USNC-URSI Radio Science Meeting (Joint with AP-S Symposium);2023-07-23
3. Active BALUN with 40 GHz bandwidth at 257 GHz in 130 nm SiGe:C;2022 IEEE 22nd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF);2022-01-16
4. A 220–330 GHz Wideband, Low-Loss and Small Marchand Balun with Ground Shields in SiGe BiCMOS Technology;2021 IEEE MTT-S International Microwave and RF Conference (IMARC);2021-12-17
5. A 300-GHz Transmitter Front End With −4.1-dBm Peak Output Power for Sub-THz Communication Using 130-nm SiGe BiCMOS Technology;IEEE Transactions on Microwave Theory and Techniques;2021-11