A Physics-Based Statistical RTN Model for the Low Frequency Noise in MOSFETs-Reference-Cited by-同舟云学术

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A Physics-Based Statistical RTN Model for the Low Frequency Noise in MOSFETs

Published:2016-09 Issue:9 Volume:63 Page:3683-3692
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Banaszeski da Silva Mauricio^ORCID,Tuinhout Hans P.,Zegers-van Duijnhoven Adrie,Wirth Gilson I.,Scholten Andries J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7548080/07539540.pdf?arnumber=7539540

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cryogenic Characterization of Low-Frequency Noise in 40-nm CMOS;IEEE Journal of the Electron Devices Society;2024

2. On the Role of NBTI and PBTI Induced Mobility Degradation for Compact Modeling in Metal-Gate/High-k FETs;2023 IEEE International Integrated Reliability Workshop (IIRW);2023-10-08

3. Impact of layout and channel processing on CMOS low frequency noise variability;ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC);2023-09-11

4. Random Telegraph Noise in Analog CMOS Circuits;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-06

5. Channel-Length-Dependent Low-Frequency Noise Characteristics of Ferroelectric Junctionless Poly-Si Thin-Film Transistors;IEEE Electron Device Letters;2023-06

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