Tunneling Negative Differential Resistance-Assisted STT-RAM for Efficient Read and Write Operations-Reference-Cited by-同舟云学术

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Tunneling Negative Differential Resistance-Assisted STT-RAM for Efficient Read and Write Operations

Published:2017-01 Issue:1 Volume:64 Page:121-129
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Shaodi^ORCID,Pan Andrew,Chui Chi On,Gupta Puneet

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7792766/07775077.pdf?arnumber=7775077

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dynamic Time-Domain Sensing Scheme for Spin-Orbit Torque MRAM;IEEE Transactions on Electron Devices;2024-07

2. Double-Ended Superposition Anti-Noise Resistance Monitoring Write Termination Scheme for Reliable Write Operation in STT-MRAM;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-03

3. Band‐to‐Band Tunneling Control by External Forces: A Key Principle and Applications;Advanced Electronic Materials;2022-12-04

4. Observation of Controllable Negative Differential Resistance Behaviors through Morphology‐Dependent Zinc Oxide/ p ‐Si Heterointerface Structures;Advanced Materials Technologies;2022-10-30

5. Unprecedentedly Uniform, Reliable, and Centimeter-Scale Molybdenum Disulfide Negative Differential Resistance Photodetectors;ACS Applied Materials & Interfaces;2021-05-20

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