Investigation of Electrical Characteristics in Al/CdS-PVA/p-Si (MPS) Structures Using Impedance Spectroscopy Method
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/7494744/07478037.pdf?arnumber=7478037
Cited by 85 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A strategy to predict the current conduction mechanisms into Al/PVP:Gr-BaTiO3/p-Si Schottky structure using Artificial Neural Network;Micro and Nanostructures;2024-11
2. Machine learning-assisted prediction of the electronic features of a Schottky diode interlaid with PVP:BaTiO3 composite;Physica Scripta;2024-07-09
3. Investigation of the frequency effect on electrical modulus and dielectric properties of Al/p-Si structure with %0.5 Bi:ZnO interfacial layer;Ionics;2024-04-17
4. A comparison electrical characteristics of the Au/(pure-PVA)/n-Si and Au/(CdTe doped-PVA)/n-Si (MPS) type Schottky structures using I–V and C–V measurements;Journal of Materials Science: Materials in Electronics;2024-04
5. The Frequency Dependent of Main Electrical Parameters, Conductivity and Surface States in the Al/ (%0.5 Bi:ZnO)/p-Si/Au (MIS) Structures;Silicon;2024-03-02
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