Enhancing High-Frequency Performance of Millimeter-Wave Transistors by Optimizing Device Width
Author:
Affiliation:
1. University of Arkansas,Department of Electrical Engineering,Fayetteville,AR,USA
Funder
Arm
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9866075/9866092/09866276.pdf?arnumber=9866276
Reference15 articles.
1. D-band and G-band high-performance GaN power amplifier MMICs;?wikli?ski;IEEE Trans Microw Theory Techn,2019
2. Gallium nitride amplifiers beyond W-band
3. N-Polar GaN MIS-HEMTs on Sapphire With High Combination of Power Gain Cutoff Frequency and Three-Terminal Breakdown Voltage
4. Effects of Electromagnetic Wave Propagations in Large-Signal Analysis of Millimeter-Wave Transistors
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1. TRMV: The innovation design of asymmetric multivibrator in transistors with adjustable frequency for commercial electronic devices;2022 International Interdisciplinary Humanitarian Conference for Sustainability (IIHC);2022-11-18
2. A Review of Physics-based Modeling of Millimeter-Wave Transistors;2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2022-10-16
3. Global Modeling of Millimeter-Wave Transistors: Analysis of Electromagnetic-Wave Propagation Effects;IEEE Access;2022
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