Global Modeling of Millimeter-Wave Transistors: Analysis of Electromagnetic-Wave Propagation Effects
Author:
Affiliation:
1. Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, USA
Funder
University of Arkansas Libraries and the U.S. Army Research Office
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
General Engineering,General Materials Science,General Computer Science,Electrical and Electronic Engineering
Link
https://ieeexplore.ieee.org/ielam/6287639/9668973/9867985-aam.pdf
Reference25 articles.
1. A Generic and Efficient Globalized Kernel Mapping-Based Small-Signal Behavioral Modeling for GaN HEMT
2. Accurate Non-linear Large Signal Physics-based Modeling for Ka-band GaN Power Amplifier Design with ASM-HEMT
3. Enhancing High-Frequency Performance of Millimeter-Wave Transistors by Optimizing Device Width
4. Effects of Electromagnetic Wave Propagations in Large-Signal Analysis of Millimeter-Wave Transistors
5. Comprehensive Physics-Based Model for Millimeterwave Transistors
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1. Nonlinear Time-domain signal and noise analysis of an active CRLH transmission line for millimeter-wave frequencies;AEU - International Journal of Electronics and Communications;2024-04
2. Effects of Electrodes Layout on Performance of Millimeter-Wave Transistors;IEEE Access;2023
3. Analysis of electromagnetic interaction between smooth and corrugated transmission lines by using a circuit model;IET Microwaves, Antennas & Propagation;2022-11-16
4. A Review of Physics-based Modeling of Millimeter-Wave Transistors;2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2022-10-16
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