Insight Into Ballisticity of Room-Temperature Carrier Transport in Carbon Nanotube Field-Effect Transistors-Reference-Cited by-同舟云学术

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Insight Into Ballisticity of Room-Temperature Carrier Transport in Carbon Nanotube Field-Effect Transistors

Published:2019-08 Issue:8 Volume:66 Page:3535-3540
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Xu Lin^ORCID,Qiu Chenguang,Zhao Chenyi,Zhang Zhiyong^ORCID,Peng Lian-Mao^ORCID

Funder

National Basic Research Program of China

National Natural Science Foundation of China

Beijing Municipal Science and Technology Commission

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8768425/08743422.pdf?arnumber=8743422

Cited by 29 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interface States in Gate Stack of Carbon Nanotube Array Transistors;ACS Nano;2024-07-08

2. SiX₂ (X = S, Se) Nanowire Gate-All-Around MOSFETs for Sub-5 nm Applications;Nano Letters;2024-05-09

3. Efficient 32-nm CNTFET-Based 1-Bit Adder: A Fast and Energy-Optimized Design;WSEAS TRANSACTIONS ON SYSTEMS;2024-04-09

4. A Compact Model for Carbon Nanotube Field Effect Transistors Incorporating Temperature Effects and Application for Operational Amplifier Design;ECS Journal of Solid State Science and Technology;2024-04-01

5. Small Molecule Additives to Suppress Bundling in Dimensional‐Limited Self‐Alignment Method for High‐Density Aligned Carbon Nanotube Array;Advanced Materials Interfaces;2023-12-17

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