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Sub-Nanosecond Pulses Enable Partial Reset for Analog Phase Change Memory

  • Published:2021-09 Issue:9 Volume:42 Page:1291-1294
  • ISSN:0741-3106
  • Container-title:IEEE Electron Device Letters
  • language:
  • Short-container-title:IEEE Electron Device Lett.

Author:

Stern Keren,Wainstein NicolasORCID,Keller Yair,Neumann Christopher M.ORCID,Pop EricORCID,Kvatinsky Shahar,Yalon EilamORCID

Funder

Israel science foundation (ISF) Grant

Russel Berrie Nanotechnology Institute (RBNI) Seeding Grant

Member Companies of the Stanford Nonvolatile Memory Technology Research Initiative

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Drift of Schottky Barrier Height in Phase Change Materials;ACS Nano;2024-03-08

2. Resistance Drift Reset State and Read Voltage Dependencies in Phase Change Memory;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

3. Electro-thermal analysis of Phase Change Memory Devices for Synaptic Applications;2023 IEEE 20th India Council International Conference (INDICON);2023-12-14

4. Investigating the Polarity Dependence of Multilevel Cell Operation in Conventional Mushroom Phase‐Change Memory Cells;physica status solidi (RRL) – Rapid Research Letters;2023-11-30

5. A nanoribbon device for analog phase change memory targeting neural network applications;Applied Physics Letters;2023-07-17
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