Drift of Schottky Barrier Height in Phase Change Materials-Reference-Cited by-同舟云学术

Drift of Schottky Barrier Height in Phase Change Materials

Published:2024-03-08 Issue:11 Volume:18 Page:8029-8037
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Nir-Harwood Rivka-Galya¹^ORCID,Cohen Guy²,Majumdar Amlan²,Haight Richard²,Ber Emanuel¹^ORCID,Gignac Lynne²,Ordan Efrat¹,Shoham Lishai¹^ORCID,Keller Yair¹,Kornblum Lior¹^ORCID,Yalon Eilam¹^ORCID

Affiliation:

1. Viterbi Faculty of Electrical & Computer Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel

2. IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, United States

Funder

Israel Science Foundation

Russell Berrie Nanotechnology Institute, Technion-Israel Institute of Technology

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.3c11019

Reference56 articles.

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4. Phase Change Memory

5. Nirschl, T.; Philipp, J. B.; Happ, T. D.; Burrt, G. W.; Rajendrant, B.; Lee, M.H.; Schrottt, A.; Yan, M.; Breitwischt, M.; Chen, C.F.; Josepht, E.; Lamorey, M.; Chee, R.; Chen, S.H.; Zaidi, S.; Raoux, S.; Chen, Y. C.; Ergmann, R. B.; Lunge, H.L.; Lamf, C. Write Strategies for 2 and 4-Bit Multi-Level Phase-Change Memory. In IEEE International Electron Devices Meeting (IEDM); IEEE, 2007. 10.1109/IEDM.2007.4418973.

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