Towards Understanding the Interaction Between Hydrogen Poisoning and Bias Stress in AlGaN/GaN MIS-HEMTs With SiNx Gate Dielectric-Reference-Cited by-同舟云学术

Towards Understanding the Interaction Between Hydrogen Poisoning and Bias Stress in AlGaN/GaN MIS-HEMTs With SiNx Gate Dielectric

Published:2021-02 Issue:2 Volume:42 Page:212-215
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Gao Rui^ORCID,Liu Chang^ORCID,He Zhiyuan^ORCID,Chen Yiqiang^ORCID,Shi Yijun^ORCID,Lin Xiaoling,Zhang Xiaowen,Wang Zhizhe,En Yunfei^ORCID,Lu Guoguang,Huang Yun

Funder

Natural Science Foundation of Guangdong Province

Special Project for Research and Development in Key areas of Guangdong Province

Guangzhou Science and Technology Plan Project

Key-Area Research and Development Program of Guangdong Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9337249/09314054.pdf?arnumber=9314054

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1. Effect of hydrogen poisoning on p-gate AlGaN/GaN HEMTs;Journal of Physics D: Applied Physics;2024-07-17

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3. Effect of High-Temperature Storage on Electrical Characteristics of Hydrogen-Treated AlGaN/GaN High-Electron-Mobility Transistors;Micromachines;2024-04-30

4. Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiNx Gate Dielectric at Different Temperatures;Micromachines;2024-01-24

5. Effect of Hydrogen on Electrical Characteristics of AlGaN/GaN HEMTs After HTO Stress;IEEE Transactions on Electron Devices;2024