Time-dependent Multiple Gate Voltage Reliability of Hybrid Ferroelectric Charge Trap Gate Stack (FEG) GaN HEMT for Power Device Applications
Author:
Affiliation:
1. National Yang Ming Chiao Tung University (NYCU),International College of Semiconductor Technology(ICST),Hsinchu 300,Taiwan
2. Indian Institute of Technology Delhi (IITD),Department of Electrical Engineering (EE),New Delhi 110016,India
Funder
Ministry of Education
Ministry of Science and Technology
Chung-Shan Institute of Science and Technology
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9908144/9907765/09907769.pdf?arnumber=9907769
Reference12 articles.
1. High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications
2. Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type ${p}$ -GaN Gate HEMTs
3. Time-Dependent Dielectric Breakdown Under AC Stress in GaN MIS-HEMTs
4. Adv Funct Materials - 2019 - Palumbo - A Review on Dielectric Breakdown in Thin Dielectrics Silicon Dioxide High-k and.pdf,0
5. Gate Leakage Current and Time-Dependent Dielectric Breakdown Measurements of Commercial 1.2 kV 4H-SiC Power MOSFETs
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1. Threshold voltage modulation on a CTL-based monolithically integrated E/D-mode GaN inverters platform with improved voltage transfer performance;Applied Physics Letters;2024-07-15
2. Reliability assessment of high-power GaN-HEMT devices with different buffers under influence of gate bias and high-temperature tests;Applied Physics Express;2024-07-01
3. High-Temperature TDDB Investigation on High Performance-Centered Hybrid HZO/HfON/Al2O3, Ferro-Electric Charge-Trap (FEG) GaN-HEMT;IEEE Transactions on Electron Devices;2023-09
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