Changes of Electrical Characteristics for AlGaN/GaN HEMTs Under Uniaxial Tensile Strain-Reference-Cited by-同舟云学术

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Changes of Electrical Characteristics for AlGaN/GaN HEMTs Under Uniaxial Tensile Strain

Published:2009-03 Issue:3 Volume:30 Page:213-215
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chia-Ta Chang ,Shih-Kuang Hsiao ,Chang E.Y.,Chung-Yu Lu ,Jui-Chien Huang ,Ching-Ting Lee

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4787231/04781795.pdf?arnumber=4781795

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3. Synthesis of a Tellurium Semiconductor with an Organic–Inorganic Hybrid Passivation Layer for High-Performance p-Type Thin Film Transistors;ACS Applied Electronic Materials;2023-08-16

4. Mechanical-electrical synergy damage effect on GaN HEMT under high-power microwave;Science China Technological Sciences;2023-07-07

5. Localized strain relaxation effect on gamma irradiated AlGaN/GaN high electron mobility transistors;Applied Physics Letters;2022-12-05

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