Localized Damage in AlGaN/GaN HEMTs Induced by Reverse-Bias Testing-Reference-Cited by-同舟云学术

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Localized Damage in AlGaN/GaN HEMTs Induced by Reverse-Bias Testing

Published:2009-05 Issue:5 Volume:30 Page:427-429
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Zanoni E.,Danesin F.,Meneghini M.,Cetronio A.,Lanzieri C.,Peroni M.,Meneghesso G.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4850262/04838796.pdf?arnumber=4838796

Cited by 67 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physical insights into the reliability of sunken source connected field plate GaN HEMTs for mm-wave applications;Microelectronics Reliability;2023-09

2. Reliability Issues in GaN Electronic Devices;Nitride Semiconductor Technology;2020-08-03

3. On-Wafer Fast Evaluation of Failure Mechanism of 0.25-μm AlGaN/GaN HEMTs: Evidence of Sidewall Indiffusion;IEEE Transactions on Electron Devices;2020-07

4. Analysis of the Significant Rise in Breakdown Voltage of GaN HEMTs From Near-Threshold to Deep Off-State Gate Bias Conditions;IEEE Transactions on Device and Materials Reliability;2019-12

5. First Observations on the Trap-Induced Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs;IEEE Transactions on Electron Devices;2019-08

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