On-Wafer Fast Evaluation of Failure Mechanism of 0.25-μm AlGaN/GaN HEMTs: Evidence of Sidewall Indiffusion-Reference-Cited by-同舟云学术

On-Wafer Fast Evaluation of Failure Mechanism of 0.25-μm AlGaN/GaN HEMTs: Evidence of Sidewall Indiffusion

Published:2020-07 Issue:7 Volume:67 Page:2765-2770
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Rzin Mehdi¹^ORCID,Meneghini Matteo¹^ORCID,Rampazzo Fabiana¹,Zhan Veronica Gao¹,Marcon Daniele¹,Grunenputt Jan²,Jung Helmut²,Lambert Benoit³,Riepe Klaus²,Blanck Herve²,Graff Andreas⁴,Altmann Frank⁴^ORCID,Simon-Najasek Michel⁴,Poppitz David⁴,Meneghesso Gaudenzio¹^ORCID,Zanoni Enrico¹^ORCID

Affiliation:

1. Department of Information Engineering, University of Padua, Padua, Italy

2. United Monolithic Semiconductor, Ulm, Germany

3. United Monolithic Semiconductor, Villebon-sur-Yvette, France

4. Fraunhofer Institute for Microstructure of Materials and Systems (IMWS), Halle, Germany

Funder

European Space Agency (ESA) and the Italian Space Agency (ASI) through the ESA European Space Research and Technology Centre

Andrew Barnes

Jouni Latti, and the EDA Project EUGANIC “European Gallium Nitride Industry Supply Chain,” coordinated by Klaus Beilenhoff

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9121781/09110722.pdf?arnumber=9110722

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress;Microelectronics Reliability;2023-11

2. Failure Physics and Reliability of GaN‐Based HEMTs for Microwave and Millimeter‐Wave Applications: A Review of Consolidated Data and Recent Results;physica status solidi (a);2022-11-19