Characteristics of Fully Depleted Strained-Silicon-On-Insulator Capacitorless Dynamic Random Access Memory Cells
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/55/5335745/05308313.pdf?arnumber=5308313
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrical Characteristics of Floating-body and Body-contacted Silicon-on-insulator n-channel Transistor by TCAD Simulation;Journal of Physics: Conference Series;2021-08-01
2. Comparison of writing methods of single memory cell with volatile and nonvolatile memory functions;Applied Physics Express;2017-05-25
3. Demonstration of Unified Memory in FinFETs;International Journal of High Speed Electronics and Systems;2014-09
4. Multi-Bit Unified Memory Concept in FinFETs with ONO Buried Insulator;ECS Transactions;2013-06-28
5. Capacitorless single transistor dynamic random-access memory devices fabricated on silicon–germanium-on-insulator substrates;Thin Solid Films;2012-07
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