Electrical Characteristics of Floating-body and Body-contacted Silicon-on-insulator n-channel Transistor by TCAD Simulation

Abstract

Abstract This work investigates the electrical characteristics of floating-body and body-contacted SOI devices with Synopsys Sentaurus TCAD simulations. Short channel effects, subthreshold slope, transconductance, DIBL, on and off current are compared and analyzed for floating-body and body-contacted SOI devices, which is useful for device design and optimization. At the same time, the results of TCAD numerical simulation are used to compare the floating body effect characteristics of the two kinds of devices. From the results, the performance of body-contacted SOI devices is better. All the figures in this paper are obtained from TCAD simulation data and results based on 2D device simulation. Circuit and 3D simulations are beyond the scope of this paper, which will be investigate in future work.