Quantification of Sense Amplifier Offset Voltage Degradation due to Zero-and Run-Time Variability
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/7558446/7560148/07560287.pdf?arnumber=7560287
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Bias-independent subthreshold swing in ballistic cold-source field-effect transistors by drain density-of-states engineering;Applied Physics Letters;2024-01-29
2. Aging Prediction and Tolerance for the SRAM Memory Cell and Sense Amplifier;Journal of Electronic Testing;2021-02
3. Accelerating Inference on Binary Neural Networks with Digital RRAM Processing;IFIP Advances in Information and Communication Technology;2020
4. Aging Monitors for SRAM Memory Cells and Sense Amplifiers;Ageing of Integrated Circuits;2019-10-01
5. Sense amplifier offset voltage analysis for both time-zero and time-dependent variability;Microelectronics Reliability;2019-08
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