Trapping Phenomena in GaN HEMTs with Fe- and C-doped Buffer-Reference-Cited by-同舟云学术

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Trapping Phenomena in GaN HEMTs with Fe- and C-doped Buffer

Published:2022-06-26 Issue: Volume: Page:
ISSN:
Container-title:2022 Device Research Conference (DRC)
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Author:

Li Kexin¹,Matsuda Takashi²,Yagyu Eiji²,Teo Koon Hoo³,Rakheja Shaloo¹

Affiliation:

1. University of Illinois at Urbana-Champaign,Holonyak Micro & Nanotechnology Laboratory,Urbana,IL,USA,61801

2. Advanced Technology R&D Center, Mitsubishi Electric Corporation,Hyogo,Japan,661-8661

3. Mitsubishi Electric Research Labs,Cambridge,MA,USA,02139

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9855770/9855647/09855817.pdf?arnumber=9855817

Reference4 articles.

1. Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

2. Suppression of charge trapping in ON-state operation of AlGaN/GaN HEMTs by Si-rich passivation

3. Evidence of surface states for AlGaN/GaN/SiC HEMTs passivated Si3N4 by CDLTS

4. Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements

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