Nanosheet FETs and their Potential for Enabling Continued Moore's Law Scaling-Reference-Cited by-同舟云学术

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Nanosheet FETs and their Potential for Enabling Continued Moore's Law Scaling

Published:2021-04-08 Issue: Volume: Page:
ISSN:
Container-title:2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
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Author:

Veloso A.,Eneman G.,de Keersgieter A.,Jang D.,Mertens H.,Matagne P.,Litta E. Dentoni,Ryckaert J.,Horiguchi N.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9420829/9420830/09420942.pdf?arnumber=9420942

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Machine Learning-Assisted Multiobjective Optimization of Advanced Node Gate-All-Around Transistor for Logic and RF Applications;IEEE Transactions on Electron Devices;2024-02

2. Improvement of Thermal Characteristics and On-Current in Vertically Stacked Nanosheet FET by Parasitic Channel Height Engineering;IEEE Access;2024

3. Electrical performance estimation and comparative study of heterojunction strained and conventional gate all around nanosheet field effect transistors;Journal of Electrical Engineering;2023-12-01

4. Novel Y-function based strategy for parameter extraction in S/D asymmetric architecture devices and low frequency noise characterization in GAA Si VNW pMOSFETs;Solid-State Electronics;2023-11

5. Discussion on the Main Mechanisms Contributing to the 1/f Noise in GAA Si VNW pMOSFETs;2023 International Conference on Noise and Fluctuations (ICNF);2023-10-17

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