RF <i>p</i>-GaN HEMT With 0.9-dB Noise Figure and 12.8-dB Associated Gain for LNA Applications-Reference-Cited by-同舟云学术

RF p-GaN HEMT With 0.9-dB Noise Figure and 12.8-dB Associated Gain for LNA Applications

Author:

Zhou Junmin¹^ORCID,Guo Haowen¹,Du Haitao¹^ORCID,Zhang Yu¹^ORCID,Qu Haolan¹^ORCID,Huang Wei²^ORCID,Zhou Jianjun³,Xiao Zhiqiang⁴,Zou Xinbo¹^ORCID

Affiliation:

1. School of Information Science and Technology (SIST), ShanghaiTech University, Shanghai, China

2. School of Microelectronics, Fudan University, Shanghai, China

3. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing, China

4. Wuxi Microelectronics Scientific Research Center, Wuxi, China

Funder

ShanghaiTech University Startup Fund

National Natural Science Foundation of China

Natural Science Foundation of Shanghai

Chinese Academy of Sciences (CAS) Strategic Science and Technology Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

Reference21 articles.

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