Author:
Luan Tiantian,Huang Sen,Jing Guanjun,Fan Jie,Yin Haibo,Gao Xinguo,Zhang Sheng,Wei Ke,Li Yankui,Jiang Qimeng,Wang Xinhua,Hou Bin,Yang Ling,Ma Xiaohua,Liu Xinyu
Abstract
Abstract
Enhancement-mode (E-mode) GaN-on-Si radio-frequency (RF) high-electron-mobility transistors (HEMTs) were fabricated on an ultrathin-barrier (UTB) AlGaN (<6 nm)/GaN heterostructure featuring a naturally depleted 2-D electron gas (2DEG) channel. The fabricated E-mode HEMTs exhibit a relatively high threshold voltage (V
TH) of +1.1 V with good uniformity. A maximum current/power gain cut-off frequency (f
T/f
MAX) of 31.3/99.6 GHz with a power added efficiency (PAE) of 52.47% and an output power density (P
out) of 1.0 W/mm at 3.5 GHz were achieved on the fabricated E-mode HEMTs with 1-µm gate and Au-free ohmic contact.
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