2.7 kV Low Leakage Vertical PtOx/β-Ga2O3 Schottky Barrier Diodes With Self-Aligned Mesa Termination

Author:

Han Zhao1ORCID,Jian Guangzhong1,Zhou Xuanze1ORCID,He Qiming1ORCID,Hao Weibing1,Liu Jinyang1,Li Botong1,Huang Hong1,Li Qiuyan1ORCID,Zhao Xiaolong1ORCID,Xu Guangwei1ORCID,Long Shibing1ORCID

Affiliation:

1. School of Microelectronics, University of Science and Technology of China (USTC), Hefei, China

Funder

NSFC

Key-Area Research and Development Program of Guangdong Province

University of Science and Technology of China (USTC) Research Funds of the Double First-Class Initiative

Fundamental Research Plan

Center for Micro and Nanoscale Research and Fabrication of USTC

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

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