Design of MEMS-Based Piezoresistive Pressure Sensor Using Two Concentric Wheatstone bridge Circuits for Intracranial Pressure Measurement

Author:

Harika Pantam Bhavya1,Kundu Sudip2

Affiliation:

1. Birla Institute of Technology, Mesra,Dept. of Electronics and Communication Engineering,Ranchi,India

2. National Institute of Technology, Rourkela,Electronics and Communication Engineering & Center for Nanomaterials,Rourkela,India

Publisher

IEEE

Reference21 articles.

1. Piezoresistance Effect in Germanium and Silicon

2. Foundations of MEMS;liu;Textbook,0

3. Design simulation and analysis of piezoresistive micro pressure sensor for pressure range of 0 to 1MPa

4. Comparative analysis of different micro-pressure sensors using comsol Multiphysics;janaki;2016 International Conference on Electrical Electronics Communication Computer and Optimization Techniques (ICEECCOT),2016

5. Simulation and design of micro pressure sensors applied to measure the intracranial pressure;bo;The 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems,2013

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Optimizing the piezoresistive design on the microcantilever for enhancing stress sensing and temperature effects;AIP Advances;2024-01-01

2. The Schemes for Reducing Temperature Drift in Intracranial Pressure Monitoring Sensor with half-bridge Pressure Transducer;2023 16th International Congress on Image and Signal Processing, BioMedical Engineering and Informatics (CISP-BMEI);2023-10-28

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