Advanced Short-Channel-Effect Modeling With Applicability to Device Optimization—Potentials and Scaling-Reference-Cited by-同舟云学术

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Advanced Short-Channel-Effect Modeling With Applicability to Device Optimization—Potentials and Scaling

Published:2019-09 Issue:9 Volume:66 Page:3726-3733
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Avila Herrera F.,Hirano Y.,Miura-Mattausch M.,Iizuka T.,Kikuchihara H.,Mattausch H. J.,Ito A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8809231/08792377.pdf?arnumber=8792377

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Impact of Geometrical and Process Design Parameters on the Performance of Schottky Barrier Reconfigurable Field Effect Transistor;2023 5th Iranian International Conference on Microelectronics (IICM);2023-10-25

3. Improved Properties of Post-Deposition Annealed Ga2O3/SiC and Ga2O3/Al2O3/SiC Back-Gate Transistors Fabricated by Radio Frequency Sputtering;Micro;2023-09-30

4. Electrical Characterization of Multi-Gate MOSFET with Reduced Short-Channel Effects for High-Power Applications;International Journal of Nanoscience;2023-09-20

5. Short-Channel Effects in Independently Controlled MG-MOSFET;Lecture Notes in Electrical Engineering;2023

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