Demonstration of UV-Induced Threshold Voltage Instabilities in Vertical GaN Nanowire Array-Based Transistors-Reference-Cited by-同舟云学术

Demonstration of UV-Induced Threshold Voltage Instabilities in Vertical GaN Nanowire Array-Based Transistors

Published:2019-05 Issue:5 Volume:66 Page:2119-2124
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ruzzarin Maria^ORCID,Meneghini Matteo^ORCID,de Santi Carlo^ORCID,Neviani Andrea^ORCID,Yu Feng^ORCID,Strempel Klaas^ORCID,Fatahilah Muhammad Fahlesa,Witzigmann Bernd^ORCID,Wasisto Hutomo Suryo^ORCID,Waag Andreas,Meneghesso Gaudenzio^ORCID,Zanoni Enrico^ORCID

Funder

NoveGaN (University of Padua) through the Project “Novel Vertical GaN-Devices for Next Generation Power Conversion,” through the STARS CoG Grants call

Lower Saxony Ministry for Science and Culture

German Research Foundation (DFG) through the projects “LENA-OptoSense” and “3D Concepts for Gallium-Nitride Electronics (3D GaN)”

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8694031/08674788.pdf?arnumber=8674788

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