Author:
Morikawa Takahiro,Ishigaki Takashi,Shima Akio
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
7 articles.
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1. Comparative Study of the Self-Aligned Channel Processes for 4H-SiC VDMOSFET;Solid State Phenomena;2024-08-22
2. A Short Channel Self-Alignment Process for High-Voltage VDMOSFETs in 4H-SiC;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
3. Research of Cell Topology on Characteristics of 750V SiC MOSFETs;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27
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5. A 1700 V-Class Self-Aligned Channel and Split Gate (SASG) Architecture of 4H-SiC VDMOSFET for High Frequency Application;2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia);2023-08-27