A 1700 V-Class Self-Aligned Channel and Split Gate (SASG) Architecture of 4H-SiC VDMOSFET for High Frequency Application-Reference-Cited by-同舟云学术

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A 1700 V-Class Self-Aligned Channel and Split Gate (SASG) Architecture of 4H-SiC VDMOSFET for High Frequency Application

Published:2023-08-27 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
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Author:

Hung Chia Lung¹,Hsiao Yi Kai¹,Kuo Hao Chung¹

Affiliation:

1. Hon Hai Research Institute,Semiconductor Research Center,Hsin Chu,Taiwan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10261884/10261892/10261901.pdf?arnumber=10261901

Reference6 articles.

1. A Channel Self-Alignment process for High-Voltage VDMOSFETs in 4H-SiC

2. A Self-Aligned Process for High-Voltage, Short-Channel Vertical DMOSFETs in 4H-SiC

3. Split-Gate 1.2-kV 4H-SiC MOSFET: Analysis and Experimental Validation

4. Device Design Consideration for Robust SiC VDMOSFET With Self-Aligned Channels Formed by Tilted Implantation

5. A novel 4H-SiC MOSFET for low switching loss and high-reliability applications

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